In an intrinsic semiconductor the energy gap g E is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity T  600K and that at 300k? Assume that the temperature dependence of intrinsic carrier

In an intrinsic semiconductor the energy gap g E is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity T  600K and that at 300k? Assume that the temperature dependence Read More …

The number of silicon atoms per m3 is 5×1028 .this is doped simultaneously with  5×1022 atoms per  m3 of Arsenic and 20 5×10 per  m3 atoms of indium. Calculate the number of electrons and holes. Given that nt =  1.5 × 1016 in m-3. Is the material n-type or p-type?

The number of silicon atoms per m3 is 5×1028 .this is doped simultaneously with  5×1022 atoms per  m3 of Arsenic and 20 5×10 per  m3 atoms of indium. Calculate the number of electrons and holes. Given that nt =  1.5 × 1016 in m-3. Read More …

Two amplifier are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal.

Two amplifier are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal.

For a CE-transmitter amplifier, the audio signal voltage across the collector resistance of 2 k Ω is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1 k Ω .

For a CE-transmitter amplifier, the audio signal voltage across the collector resistance of 2 k Ω is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is Read More …

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