## Write the truth table for the circuits given in Fig. 14.48 consisting of NOR gates only. Identify the logic operations (OR, AND, NOT) performed by the two circuits.

Write the truth table for the circuits given in Fig. 14.48 consisting of NOR gates only. Identify the logic operations (OR, AND, NOT) performed by the two circuits.

## Write the truth table for circuit given in Fig. 14.47 below consisting of NOR gates and identify the logic operation (OR, AND, NOT) which this circuit is performing.

Write the truth table for circuit given in Fig. 14.47 below consisting of NOR gates and identify the logic operation (OR, AND, NOT) which this circuit is performing.

## You are given two circuits as shown In Fig. 14.46, which consist of NAND gates. Identify the logic operation carried out by the two circuits.

You are given two circuits as shown In Fig. 14.46, which consist of NAND gates. Identify the logic operation carried out by the two circuits.

## Write the truth table for a NAND Gate connected as given in Fig. 14.45.

Write the truth table for a NAND Gate connected as given in Fig. 14.45.

## You are given he two circuits as shown in Fig.14.44. Show that current (a) acts as OR gate while the circuit (b) acts as AND gate.

You are given he two circuits as shown in Fig.14.44. Show that current (a) acts as OR gate while the circuit (b) acts as AND gate.

## In a p-n junction diode, the current I can be expressed as

In a p-n junction diode, the current I can be expressed as

## In an intrinsic semiconductor the energy gap g E is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity T  600K and that at 300k? Assume that the temperature dependence of intrinsic carrier

In an intrinsic semiconductor the energy gap g E is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity T  600K and that at 300k? Assume that the temperature dependence Read More …

## The number of silicon atoms per m3 is 5×1028 .this is doped simultaneously with  5×1022 atoms per  m3 of Arsenic and 20 5×10 per  m3 atoms of indium. Calculate the number of electrons and holes. Given that nt =  1.5 × 1016 in m-3. Is the material n-type or p-type?

The number of silicon atoms per m3 is 5×1028 .this is doped simultaneously with  5×1022 atoms per  m3 of Arsenic and 20 5×10 per  m3 atoms of indium. Calculate the number of electrons and holes. Given that nt =  1.5 × 1016 in m-3. Read More …

## A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

## Two amplifier are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal.

Two amplifier are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal.

## For a CE-transmitter amplifier, the audio signal voltage across the collector resistance of 2 k Ω is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1 k Ω .

For a CE-transmitter amplifier, the audio signal voltage across the collector resistance of 2 k Ω is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is Read More …

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